Invention Grant
- Patent Title: Method of manufacturing nitride semiconductor device
- Patent Title (中): 氮化物半导体器件的制造方法
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Application No.: US14522152Application Date: 2014-10-23
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Publication No.: US09054234B2Publication Date: 2015-06-09
- Inventor: Moon-Sang Lee , Sung-Soo Park , Bong-Kyun Kang , Dae-Ho Yoon
- Applicant: Samsung Electronics Co., Ltd. , Research & Business Foundation Sungkyunkwan University
- Applicant Address: KR Suwon-Si, Gyeonggi-Do KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2013-0133821 20131105
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L33/00
Abstract:
A nitride semiconductor device may include a substrate, a dislocation control layer formed on the substrate and including a plurality of hollow structures including a nitride, and a nitride semiconductor layer formed on the dislocation control layer.
Public/Granted literature
- US20150125982A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE Public/Granted day:2015-05-07
Information query
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