Invention Grant
- Patent Title: Scanning ion microscope and secondary particle control method
- Patent Title (中): 扫描离子显微镜和二次粒子控制方法
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Application No.: US14363252Application Date: 2012-11-08
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Publication No.: US09058959B2Publication Date: 2015-06-16
- Inventor: Yoshimi Kawanami , Yoichi Ose
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2011-266616 20111206
- International Application: PCT/JP2012/078925 WO 20121108
- International Announcement: WO2013/084651 WO 20130613
- Main IPC: H01J37/26
- IPC: H01J37/26 ; H01J37/28 ; H01J37/244 ; H01J37/22 ; H01J37/20

Abstract:
The present invention is provided to enable a detailed inspection of a specimen and preventing a distortion of an observation image even when a specimen containing an insulating material is partially charged. For a scanning ion microscope utilizing a gas field ionization ion source, a thin film is disposed between an ion optical system and a specimen, and an ion beam is applied to and transmitted through this thin film in order to focus a neutralized beam on the specimen. Furthermore, an electrode for regulating secondary electrons discharged from this thin film is provided in order to eliminate mixing of noises into an observation image.
Public/Granted literature
- US20150048247A1 SCANNING ION MICROSCOPE AND SECONDARY PARTICLE CONTROL METHOD Public/Granted day:2015-02-19
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