Invention Grant
- Patent Title: Dielectric composition for thin-film transistors
- Patent Title (中): 薄膜晶体管的介电组成
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Application No.: US14142035Application Date: 2013-12-27
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Publication No.: US09058981B2Publication Date: 2015-06-16
- Inventor: Yiliang Wu , Ping Liu , Anthony James Wigglesworth , Nan-Xing Hu
- Applicant: Xerox Corporation
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Main IPC: H01B3/18
- IPC: H01B3/18 ; H01L21/02 ; H01B3/30 ; H01B3/42 ; H01B3/44 ; H01L51/05 ; H01B3/46 ; H01L51/00

Abstract:
An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and a thermal acid generator. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The thermal acid generator allows the dielectric layer to be cured at relatively lower temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.
Public/Granted literature
- US20140114002A1 DIELECTRIC COMPOSITION FOR THIN-FILM TRANSISTORS Public/Granted day:2014-04-24
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