发明授权
US09058995B2 Self-protected drain-extended metal-oxide-semiconductor transistor
有权
自保护漏极扩展金属氧化物半导体晶体管
- 专利标题： Self-protected drain-extended metal-oxide-semiconductor transistor
- 专利标题（中）： 自保护漏极扩展金属氧化物半导体晶体管
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申请号： US13440514申请日： 2012-04-05
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公开(公告)号： US09058995B2公开(公告)日： 2015-06-16
- 发明人: Robert J. Gauthier, Jr. , Junjun Li , Alain Loiseau
- 申请人： Robert J. Gauthier, Jr. , Junjun Li , Alain Loiseau
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Wood, Herron & Evans, LLP
- 代理商 Anthony J. Canale
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/66 ; H01L27/02 ; H01L29/74 ; H01L29/45 ; H01L29/78 ; H01L29/06
摘要：
Device structures, design structures, and fabrication methods for a drain-extended metal-oxide-semiconductor (DEMOS) transistor. A first well of a first conductivity type and a second well of a second conductivity type are formed in a device region. The first and second wells are juxtaposed to define a p-n junction. A first doped region of the first conductivity type and a doped region of the second conductivity type are in the first well. The first doped region of the first conductivity type is separated from the second well by a first portion of the first well. The doped region of the second conductivity type is separated from the second well by a second portion of the first well. A second doped region of the first conductivity type, which is in the second well, is separated by a portion of the second well from the first and second portions of the first well.