发明授权
- 专利标题： Semiconductor device structure and method of manufacturing the same
- 专利标题（中）： 半导体器件结构及其制造方法
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申请号： US14139514申请日： 2013-12-23
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公开(公告)号： US09059126B1公开(公告)日： 2015-06-16
- 发明人: Chien-Hsuan Liu , Chao-Chi Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L23/367 ; H01L49/02 ; H01L29/06 ; H01L23/373 ; H01L21/02 ; H01L21/324 ; H01L21/8234
摘要：
Embodiments of mechanisms for forming a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate having a first device region and a second device region. The semiconductor device structure further includes first devices in the first device region and second devices in the second device region. The semiconductor device structure also includes a first annular structure continuously surrounding the first device region and a second annular structure continuously surrounding the second device region. The first annular structure has a first thermal diffusion coefficient less than a second thermal diffusion coefficient of the second annular structure.
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