发明授权
- 专利标题： Oxide thin film transistor and method of fabricating the same
- 专利标题（中）： 氧化物薄膜晶体管及其制造方法
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申请号： US13490614申请日： 2012-06-07
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公开(公告)号： US09059296B2公开(公告)日： 2015-06-16
- 发明人: Hwan Kim , Heung-Lyul Cho , Tae-Young Oh , Ji-Eun Jung
- 申请人： Hwan Kim , Heung-Lyul Cho , Tae-Young Oh , Ji-Eun Jung
- 申请人地址： KR Seoul
- 专利权人： LG Display Co., Ltd.
- 当前专利权人： LG Display Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： Morgan, Lewis & Bockius LLP
- 优先权： KR10-2011-0055786 20110609
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786 ; H01L27/12 ; H01L21/00 ; H01L29/24 ; H01L29/66
摘要：
An oxide thin film transistor (TFT) and a fabrication method thereof are provided. First and second data wirings are made of different metal materials, and an active layer is formed on the first data wiring to implement a short channel, thus enhancing performance of the TFT. The first data wiring in contact with the active layer is made of a metal material having excellent contact characteristics and the other remaining second data wiring is made of a metal material having excellent conductivity, so as to be utilized to a large-scale oxide TFT process. Also, the first and second data wirings may be formed together by using half-tone exposure, simplifying the process.
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