发明授权
- 专利标题： Buried channel field-effect transistors
- 专利标题（中）： 埋地通道场效应晶体管
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申请号： US13470620申请日： 2012-05-14
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公开(公告)号： US09059321B2公开(公告)日： 2015-06-16
- 发明人: Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Tak H. Ning
- 申请人： Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Tak H. Ning
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L21/84 ; H01L27/12 ; H01L29/66 ; H01L29/10 ; H01L29/786 ; H01L29/78 ; H01L21/8238 ; H01L29/51
摘要：
Methods for forming a buried-channel field-effect transistor include doping source and drain regions on a substrate with a dopant having a first type; forming a doped shielding layer on the substrate in a channel region having a second doping type opposite the first type to displace a conducting channel away from a gate-interface region; forming a gate dielectric over the doped shielding layer; and forming a gate on the gate dielectric.
公开/授权文献
- US20130302949A1 BURIED-CHANNEL FIELD-EFFECT TRANSISTORS 公开/授权日：2013-11-14