发明授权
US09059395B2 Resistive random access memory devices having variable resistance layers and related methods
有权
具有可变电阻层的电阻式随机存取存储器件及相关方法
- 专利标题: Resistive random access memory devices having variable resistance layers and related methods
- 专利标题(中): 具有可变电阻层的电阻式随机存取存储器件及相关方法
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申请号: US14090803申请日: 2013-11-26
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公开(公告)号: US09059395B2公开(公告)日: 2015-06-16
- 发明人: Hyunsu Ju , Eunmi Kim , Yoocheol Shin , Min Kyu Yang , Jungdal Choi
- 申请人: Hyunsu Ju , Eunmi Kim , Yoocheol Shin , Min Kyu Yang , Jungdal Choi
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec
- 优先权: KR10-2012-0136333 20121128
- 主分类号: H01L29/02
- IPC分类号: H01L29/02 ; H01L45/00 ; H01L27/24
摘要:
Resistive memory devices are provided having a gate stack including insulating layers and gates stacked on a substrate in a vertical direction, a channel penetrating the gate stack in the vertical direction to be electrically connected to the substrate, a gate insulating layer provided between the channel and the gates, and a variable resistance layer disposed along an extending direction of the channel. The gate stack may include an alcove formed by recessing the gate in a horizontal direction. The variable resistance layer may extend toward the alcove in the horizontal direction and be overlapped with at least one of the gates in the horizontal direction. Related methods are also provided.