Invention Grant
- Patent Title: Complementary metal-oxide-semiconductor X-ray detector
- Patent Title (中): 互补金属氧化物半导体X射线检测器
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Application No.: US13569890Application Date: 2012-08-08
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Publication No.: US09063238B2Publication Date: 2015-06-23
- Inventor: James Zhengshe Liu , David Ellis Barker
- Applicant: James Zhengshe Liu , David Ellis Barker
- Applicant Address: US NY Schenectady
- Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee: GENERAL ELECTRIC COMPANY
- Current Assignee Address: US NY Schenectady
- Agency: Fletcher Yoder, P.C.
- Main IPC: G01T1/20
- IPC: G01T1/20 ; H01L27/146 ; G01T1/24

Abstract:
In accordance with one embodiment, a digital X-ray detector is provided. The detector includes a scintillator layer configured to absorb radiation emitted from a radiation source and to emit optical photons in response to the absorbed radiation. The detector also includes a complementary metal-oxide-semiconductor (CMOS) light imager that is configured to absorb the optical photons emitted by the scintillator layer. The CMOS light imager includes a first surface and a second surface, and the first surface is disposed opposite the second surface. The scintillator layer contacts the first surface of the CMOS light imager.
Public/Granted literature
- US20140042328A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR X-RAY DETECTOR Public/Granted day:2014-02-13
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