Invention Grant
- Patent Title: Error recovery storage along a memory string
- Patent Title (中): 沿着内存字符串的恢复存储器出错
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Application No.: US14263825Application Date: 2014-04-28
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Publication No.: US09063875B2Publication Date: 2015-06-23
- Inventor: William H. Radke
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; H03M13/25 ; H03M13/29

Abstract:
Apparatus and methods store error recovery data in different dimensions of a memory array. For example, in one dimension, block error correction codes (ECC) are used, and in another dimension, supplemental error correction codes, such as convolutional codes, are used. By using separate dimensions, the likelihood that a defect affects both error recovery techniques is lessened, thereby increasing the probability that error recovery can be performed successfully. In one example, block error correction codes are used for data stored along rows, and this data is stored in one level of multiple-level cells of the array. Supplemental error correction codes are used for data stored along columns, such as along the cells of a string, and the supplemental error correction codes are stored in a different level than the error correction codes.
Public/Granted literature
- US20140325317A1 ERROR RECOVERY STORAGE ALONG A MEMORY STRING Public/Granted day:2014-10-30
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