发明授权
- 专利标题： Performing enhanced cleaning in the formation of MOS devices
- 专利标题（中）： 在MOS器件的形成中进行增强清洗
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申请号： US13427628申请日： 2012-03-22
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公开(公告)号： US09064688B2公开(公告)日： 2015-06-23
- 发明人: Yu-Hung Cheng , Wu-Ping Huang , Chii-Horng Li , Tze-Liang Lee
- 申请人： Yu-Hung Cheng , Wu-Ping Huang , Chii-Horng Li , Tze-Liang Lee
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/76 ; H01L21/311 ; H01L21/302 ; H01L21/461 ; H01L21/02 ; H01L21/3065 ; H01L21/8234 ; H01L21/8238 ; H01L29/66 ; H01L29/78 ; H01L29/165
摘要：
A method includes etching a semiconductor substrate to form a recess, wherein the recess extends from a top surface of the semiconductor substrate into the semiconductor substrate. An enhanced cleaning is then performed to etch exposed portions of the semiconductor substrate. The exposed portions are in the recess. The enhanced cleaning is performed using process gases including hydrochloride (HCl) and germane (GeH4). After the enhanced cleaning, an epitaxy is performed to grow a semiconductor region in the recess.
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