发明授权
- 专利标题: Sublithographic width finFET employing solid phase epitaxy
- 专利标题(中): 使用固相外延的亚光刻宽度finFET
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申请号: US13597752申请日: 2012-08-29
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公开(公告)号: US09064745B2公开(公告)日: 2015-06-23
- 发明人: Chengwen Pei , Kangguo Cheng , Joseph Ervin , Juntao Li , Ravi M. Todi , Geng Wang
- 申请人: Chengwen Pei , Kangguo Cheng , Joseph Ervin , Juntao Li , Ravi M. Todi , Geng Wang
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L27/12 ; H01L21/8238 ; H01L21/84 ; H01L29/66 ; H01L27/092
摘要:
A dielectric mandrel structure is formed on a single crystalline semiconductor layer. An amorphous semiconductor material layer is deposited on the physically exposed surfaces of the single crystalline semiconductor layer and surfaces of the mandrel structure. Optionally, the amorphous semiconductor material layer can be implanted with at least one different semiconductor material. Solid phase epitaxy is performed on the amorphous semiconductor material layer employing the single crystalline semiconductor layer as a seed layer, thereby forming an epitaxial semiconductor material layer with uniform thickness. Remaining portions of the epitaxial semiconductor material layer are single crystalline semiconductor fins and thickness of these fins are sublithographic. After removal of the dielectric mandrel structure, the single crystalline semiconductor fins can be employed to form a semiconductor device.