发明授权
- 专利标题: Mask for near-field lithography and fabrication the same
- 专利标题(中): 用于近场光刻和制造的掩模相同
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申请号: US13767639申请日: 2013-02-14
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公开(公告)号: US09069244B2公开(公告)日: 2015-06-30
- 发明人: Boris Kobrin
- 申请人: Boris Kobrin
- 申请人地址: US CA Pleasanton
- 专利权人: Rolith, Inc.
- 当前专利权人: Rolith, Inc.
- 当前专利权人地址: US CA Pleasanton
- 代理机构: JDI Patent
- 代理商 Joshua D. Isenberg
- 主分类号: G03F7/24
- IPC分类号: G03F7/24 ; G03F1/00 ; G03F7/00 ; G03F1/92 ; B82Y10/00 ; B82Y40/00
摘要:
Methods for fabricating nanopatterned cylindrical photomasks are disclosed. A master pattern having nanometer scale features may be formed on a master substrate. A layer of an elastomer material may be formed on a surface of a transparent cylinder. The master pattern may be transferred from the master to the layer of elastomer material on the surface of the transparent cylinder. Alternatively, a nanopatterned cylindrical photomask may be fabricated by forming a pattern having nanometer scale features on an elastomer substrate and laminating the patterned elastomer substrate to a surface of a cylinder. In another method, a layer of elastomer material may be formed on a surface of a transparent cylinder and a pattern having nanometer scale features may be formed on the elastomer material by a direct patterning process.
公开/授权文献
- US20130224636A1 MASK FOR NEAR-FIELD LITHOGRAPHY AND FABRICATION THE SAME 公开/授权日:2013-08-29
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