发明授权
- 专利标题: Array substrate and manufacturing method thereof
- 专利标题(中): 阵列基板及其制造方法
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申请号: US13703711申请日: 2012-08-22
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公开(公告)号: US09070772B2公开(公告)日: 2015-06-30
- 发明人: Honglin Zhang , Dan Wang , Xibin Shao
- 申请人: Honglin Zhang , Dan Wang , Xibin Shao
- 申请人地址: CN Beijing CN Beijing
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.,BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Beijing CN Beijing
- 代理机构: Ladas & Parry LLP
- 优先权: CN201110243246 20110823
- 国际申请: PCT/CN2012/080462 WO 20120822
- 国际公布: WO2013/026395 WO 20130228
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L29/786 ; G02F1/1368 ; H01L29/66 ; H01L27/12
摘要:
Embodiments of the present invention disclose an array substrate and a manufacturing method thereof. The method comprises forming a patterned active layer on a gate insulating layer, the active layer covering a part of the gate insulating layer; forming a source/drain electrode material layer on the active layer and the gate insulating layer; forming a patterned insulating layer on the source/drain electrode material layer; conducting an etching process by using the insulating layer as a mask, so as to etch the source/drain electrode material layer to form a source electrode and a drain electrode, etch a part of the insulating layer to form a via hole in the insulating layer over the drain electrode, and etch a part of the active layer between the source electrode and the drain electrode to form a channel.
公开/授权文献
- US20130221357A1 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 公开/授权日:2013-08-29