发明授权
- 专利标题： Process for fabricating silicon-on-nothing MOSFETs
- 专利标题（中）： 制造无硅无源MOSFET的工艺
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申请号： US13336191申请日： 2011-12-23
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公开(公告)号： US09070774B2公开(公告)日： 2015-06-30
- 发明人: Ta-Wei Wang , Chih-Sheng Chang
- 申请人： Ta-Wei Wang , Chih-Sheng Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/786 ; H01L29/06 ; H01L29/66
摘要：
A semiconductor device includes a gate stack; an air-gap under the gate stack; a semiconductor layer vertically between the gate stack and the air-gap; and a first dielectric layer underlying and adjoining the semiconductor layer. The first dielectric layer is exposed to the air-gap.
公开/授权文献
- US20120094456A1 Process for Fabricating Silicon-on-Nothing MOSFETs 公开/授权日：2012-04-19
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