发明授权
- 专利标题: Light-emitting device and fabrication method thereof
- 专利标题(中): 发光元件及其制造方法
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申请号: US13175552申请日: 2011-07-01
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公开(公告)号: US09070832B2公开(公告)日: 2015-06-30
- 发明人: KyungWook Park
- 申请人: KyungWook Park
- 申请人地址: KR Seoul
- 专利权人: LG Innotek Co., Ltd.
- 当前专利权人: LG Innotek Co., Ltd.
- 当前专利权人地址: KR Seoul
- 代理机构: KED & Associates LLP
- 优先权: KR10-2010-0064487 20100705
- 主分类号: H01L33/38
- IPC分类号: H01L33/38 ; H01L33/44 ; H01L33/40 ; H01L33/00
摘要:
Disclosed is a light-emitting device including a conductive support substrate, a reflective layer arranged on the conductive support substrate, a first electrode layer arranged on the reflective layer and provided with a step in at least one region of the edge thereof, a protective layer arranged on the step, and a light-emitting structure arranged on the first electrode layer and the protective layer, the light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein at least one region of the reflective layer and the first electrode layer vertically overlaps the protective layer. Based on this configuration, the light-emitting device can exhibit improved adhesion between the electrode layer and the reflective layer and be provided with a wider reflective layer, thus improving brightness.
公开/授权文献
- US20120001219A1 LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF 公开/授权日:2012-01-05
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