发明授权
- 专利标题： Positive resist composition and patterning process
- 专利标题（中）： 正抗蚀剂组成和图案化工艺
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申请号： US13956533申请日： 2013-08-01
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公开(公告)号： US09075308B2公开(公告)日： 2015-07-07
- 发明人: Jun Hatakeyama , Koji Hasegawa
- 申请人： Shin-Etsu Chemical Co., Ltd.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人： SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2012-179141 20120813
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; G03F7/039 ; G03F7/20
摘要：
A positive resist composition comprises a polymer having a carboxyl group substituted with an acid labile group having formula (1) wherein R1 and R2 are alkyl or alkenyl, R3 and R4 are a single bond, methylene, ethylene or propylene, R5 and R6 are hydrogen or alkyl. The composition has a high dissolution contrast, high resolution, and suppressed acid diffusion rate, and forms a pattern of good profile and minimal edge roughness.
公开/授权文献
- US20140045122A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS 公开/授权日：2014-02-13
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