Invention Grant
- Patent Title: Semiconductor memory device and refresh method thereof
- Patent Title (中): 半导体存储器件及其刷新方法
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Application No.: US13661773Application Date: 2012-10-26
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Publication No.: US09076504B2Publication Date: 2015-07-07
- Inventor: Jong-Ho Lee , Kyu-Chang Kang , Hyo-Chang Kim , Jae-Youn Youn , Sang-Jae Rhee
- Applicant: Jong-Ho Lee , Kyu-Chang Kang , Hyo-Chang Kim , Jae-Youn Youn , Sang-Jae Rhee
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0002470 20120109
- Main IPC: G11C7/08
- IPC: G11C7/08 ; G11C11/406 ; G11C11/4091

Abstract:
A semiconductor memory device and a self-refresh method of the semiconductor memory device. The semiconductor memory device includes: a memory cell array including one or more memory cells; a sense amplifier connected to a sensing line and a complementary sensing line and sensing/amplifying data stored in the one or more memory cells; and a sense amplifier control circuit sequentially supplying a first voltage and a second voltage having different levels to the sense amplifier through the sensing line during a refresh operation.
Public/Granted literature
- US20130176803A1 SEMICONDUCTOR MEMORY DEVICE AND REFRESH METHOD THEREOF Public/Granted day:2013-07-11
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