Non linear current response circuits can be used in embedded resistive memory cell for reducing power consumption, together with improving reliability of the memory array. The non linear current response circuits can include two back to back leaky PIN diodes, two parallel anti-directional PIN diodes, two back to back Zener-type metal oxide diodes, or ovonic switching elements, along with current limiting resistor for standby power reduction at the low voltage region. Also, the proposed embedded ReRAM implementation methods based upon 1T2D1R scheme can be integrated into the advanced FEOL process technologies including vertical pillar transistor and/or 3D fin-shaped field effect transistor (FinFET) for realizing a highly compact cell density.