A method is provided for accessing a memory device. The method includes programming data in a plurality of cells of the memory device in a first programming operation. The first programming operation uses a first memory instruction including at least one first parameter representative of at least one first threshold voltage value for said programming. The method further includes re-programming at least a portion of the data in the plurality of cells in a second programming operation. The second programming operation uses a second memory instruction including at least one second parameter representative of at least one second threshold voltage value for said re-programming, wherein said re-programming provides bit manipulation of the portion of the data.