Invention Grant
US09076533B2 Method of reprogramming nonvolatile memory comprising marking some cells as blanks
有权
重新编程非易失性存储器的方法包括将一些细胞标记为空白
- Patent Title: Method of reprogramming nonvolatile memory comprising marking some cells as blanks
- Patent Title (中): 重新编程非易失性存储器的方法包括将一些细胞标记为空白
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Application No.: US13803390Application Date: 2013-03-14
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Publication No.: US09076533B2Publication Date: 2015-07-07
- Inventor: Jun-Jin Kong , Avner Dor , Moshe Twitto , Shay Landis
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0057514 20120530
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C16/04 ; G11C16/34
Abstract:
A method of operating a memory device includes programming a first data signal to a first memory cell, attempting to program a second data signal to the first memory cell in a state where the first memory cell is not erased, and marking the first memory cell as blank upon failing to program the second data signal to the first memory cell.
Public/Granted literature
- US20130322175A1 METHOD OF REPROGRAMMING NONVOLATILE MEMORY COMPRISING MARKING SOME CELLS AS BLANKS Public/Granted day:2013-12-05
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