发明授权
- 专利标题: Memory test system and memory test method
- 专利标题(中): 内存测试系统和内存测试方法
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申请号: US13666934申请日: 2012-11-01
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公开(公告)号: US09076558B2公开(公告)日: 2015-07-07
- 发明人: Wen-Chang Cheng
- 申请人: Wen-Chang Cheng
- 申请人地址: TW Taoyuan
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Taoyuan
- 代理机构: Jianq Chyun IP Office
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C29/56
摘要:
A memory test system and a memory test method are provided. The memory test system includes a control unit, a data reading channel, a data writing channel and a test channel. The control unit generates and outputs a first read and a first write command. The data reading channel and the data writing channel coupled to the memory unit, and the control unit respectively reads data from the memory unit at a first time and writes the data back to the memory unit at a second time according to the first read command and the first write command. The test channel receives the data from the data reading channel through an input end and outputs the data back to the data writing channel through an output end after a time delay. The time delay is substantially equal to a time interval between the first time and the second time.
公开/授权文献
- US20140122948A1 MEMORY TEST SYSTEM AND MEMORY TEST METHOD 公开/授权日:2014-05-01
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