Invention Grant
- Patent Title: Semiconductor device and method of forming through-silicon-via with sacrificial layer
- Patent Title (中): 用牺牲层形成通硅通孔的半导体器件和方法
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Application No.: US13743054Application Date: 2013-01-16
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Publication No.: US09076655B2Publication Date: 2015-07-07
- Inventor: Duk Ju Na , Calvert Tan , Chang Beom Yong
- Applicant: STATS ChipPAC, Ltd.
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/02

Abstract:
A semiconductor device can be formed by first providing a semiconductor wafer, and forming a conductive via into the semiconductor wafer. A portion of the semiconductor wafer can be removed so that the conductive via extends above a surface of the semiconductor wafer. A first insulating layer can be formed over the surface of the semiconductor wafer and the conductive via, followed by a second insulating layer, the second insulating layer having a different material composition than the first insulating layer. Portions of the insulating layers can be removed to expose the conductive via.
Public/Granted literature
- US20140199838A1 Semiconductor Device and Method of Forming Through-Silicon-Via with Sacrificial Layer Public/Granted day:2014-07-17
Information query
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