Invention Grant
US09076669B2 Semiconductor device having high-K gate insulation films including lanthanum
有权
具有包括镧的高K栅极绝缘膜的半导体器件
- Patent Title: Semiconductor device having high-K gate insulation films including lanthanum
- Patent Title (中): 具有包括镧的高K栅极绝缘膜的半导体器件
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Application No.: US13833153Application Date: 2013-03-15
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Publication No.: US09076669B2Publication Date: 2015-07-07
- Inventor: Ju Youn Kim , Young-Hun Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0051041 20120514
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/088 ; H01L21/02 ; H01L27/11 ; H01L21/8238 ; H01L27/092 ; H01L21/28 ; H01L29/51 ; H01L29/78
Abstract:
A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes a first gate insulation film on a substrate and the first gate insulation film includes a material selected from the group consisting of HfO2, ZrO2, Ta2O5, TiO2, SrTiO3 and (Ba,Sr)TiO3, and lanthanum (La). Additionally, the semiconductor device includes a first barrier film on the first gate insulation film, a first gate electrode on the first barrier film, and n-type source/drain regions in the substrate at both sides of the first gate electrode.
Public/Granted literature
- US20130299912A1 SEMICONDUCTOR DEVICE HAVING HIGH-K GATE INSULATION FILMS AND FABRICATING METHOD THEREOF Public/Granted day:2013-11-14
Information query
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