Invention Grant
- Patent Title: Locally passivated germanium-on-insulator substrate
- Patent Title (中): 局部钝化锗绝缘体上基板
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Application No.: US13748146Application Date: 2013-01-23
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Publication No.: US09076713B2Publication Date: 2015-07-07
- Inventor: Thomas Signamarcheix , Frederic Allibert , Chrystel Deguet
- Applicant: Soitec , Commissariat à l'Énergie Atomique
- Applicant Address: FR Bernin FR Paris
- Assignee: Soitec,Commissariat à l'Énergie Atomique
- Current Assignee: Soitec,Commissariat à l'Énergie Atomique
- Current Assignee Address: FR Bernin FR Paris
- Agency: Winston & Strawn LLP
- Priority: EP08290827 20080903
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392 ; H01L23/58 ; H01L29/16 ; H01L21/318 ; H01L21/762
Abstract:
The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localized positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.
Public/Granted literature
- US20130134547A1 METHOD FOR FABRICATING A LOCALLY PASSIVATED GERMANIUM-ON-INSULATOR SUBSTRATE Public/Granted day:2013-05-30
Information query
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