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US09076803B2 Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structure 有权
双层成形模具的半导体装置和方法形成在积层互连结构的相对侧上

Semiconductor device and method of dual-molding die formed on opposite sides of build-up interconnect structure
摘要：
A semiconductor device has a first interconnect structure. A first semiconductor die has an active surface oriented towards and mounted to a first surface of the first interconnect structure. A first encapsulant is deposited over the first interconnect structure and first semiconductor die. A second semiconductor die has an active surface oriented towards and mounted to a second surface of the first interconnect structure opposite the first surface. A plurality of first conductive pillars is formed over the second surface of the first interconnect structure and around the second semiconductor die. A second encapsulant is deposited over the second semiconductor die and around the plurality of first conductive pillars. A second interconnect structure including a conductive layer and bumps are formed over the second encapsulant and electrically connect to the plurality of first conductive pillars and the first and second semiconductor die.
摘要（中）：

半导体器件具有第一互连结构。 第一半导体管芯具有朝向并安装到第一互连结构的第一表面的有源表面。 第一密封剂沉积在第一互连结构和第一半导体管芯上。 第二半导体管芯具有朝向并安装到与第一表面相对的第一互连结构的第二表面的有源表面。 多个第一导电柱形成在第一互连结构的第二表面上并且围绕第二半导体管芯。 第二密封剂沉积在第二半导体管芯上并围绕多个第一导电柱。 包括导电层和凸块的第二互连结构形成在第二密封剂上并且电连接到多个第一导电柱和第一和第二半导体管芯。

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