发明授权
- 专利标题： Non-volatile memory device, method of operating the same and method of fabricating the same
- 专利标题（中）： 非易失性存储器件，其操作方法及其制造方法
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申请号： US13716943申请日： 2012-12-17
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公开(公告)号： US09076865B2公开(公告)日： 2015-07-07
- 发明人: Jun Hyuk Lee , Seul Ki Oh
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2012-0093179 20120824
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; H01L29/78 ; H01L27/115 ; H01L29/786
摘要：
A non-volatile memory device includes a semiconductor substrate having active regions formed of a p-type semiconductor, first and second vertical strings disposed on the active regions, channels extending vertical to the semiconductor substrate, and a plurality of memory cells stacked along the channels, wherein the active regions are directly connected to the channels of the first and second vertical strings.
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