发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14156187申请日： 2014-01-15
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公开(公告)号： US09076866B2公开(公告)日： 2015-07-07
- 发明人: Jun Kyo Suh
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2013-0115012 20130927
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L29/00 ; H01L29/78 ; H01L29/66 ; H01L21/768 ; H01L29/417 ; H01L21/265
摘要：
A semiconductor device includes a semiconductor substrate including a plurality of pillars, a gate electrode formed to surround a lower portion of the pillar and having a top surface lower than a top surface of the pillar, a salicide layer formed to cover the top surface of the pillar and surround an upper portion of the pillar, and an electrode formed to cover a top surface and a lateral surface of the salicide layer.
公开/授权文献
- US20150091081A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 公开/授权日：2015-04-02
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