发明授权
US09076887B2 Method of fabricating a vertical diffusion metal-oxide-semiconductor transistor
有权
制造垂直扩散金属氧化物半导体晶体管的方法
- 专利标题： Method of fabricating a vertical diffusion metal-oxide-semiconductor transistor
- 专利标题（中）： 制造垂直扩散金属氧化物半导体晶体管的方法
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申请号： US13464584申请日： 2012-05-04
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公开(公告)号： US09076887B2公开(公告)日： 2015-07-07
- 发明人: Tsung-Hsiung Lee , Shang-Hui Tu , Rudy Octavius Sihombing
- 申请人： Tsung-Hsiung Lee , Shang-Hui Tu , Rudy Octavius Sihombing
- 申请人地址： TW Hsinchu
- 专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 优先权： TW100145294A 20111208
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L21/336 ; H01L21/8234 ; H01L29/06 ; H01L21/265 ; H01L27/088
摘要：
A method for fabricating a semiconductor device is provided. A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first conductive type. An epitaxy layer having the first conductive type is formed on the semiconductor substrate. First trenches are formed in the epitaxy layer. First insulating liner layers are formed on sidewalls and bottoms of the first trenches. A first dopant having the first conductive type dopes the epitaxy layer from the sidewalls of the first trenches to form first doped regions. A first insulating material is filled into the first trenches. Second trenches are formed in the epitaxy layer. Second insulating liner layers are formed on sidewalls and bottoms of the second trenches. A second dopant having a second conductive type dopes the epitaxy layer from the sidewalls of the second trenches to form second doped regions.
公开/授权文献
- US20130149822A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 公开/授权日：2013-06-13
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