Invention Grant
- Patent Title: High efficiency path based power amplifier circuitry
- Patent Title (中): 高效路径功率放大器电路
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Application No.: US13845410Application Date: 2013-03-18
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Publication No.: US09077405B2Publication Date: 2015-07-07
- Inventor: David E. Jones , Wayne D. Tattershall
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01Q11/12
- IPC: H01Q11/12 ; H04B1/04 ; H03F1/02 ; H03F3/195 ; H03F3/21 ; H03F3/24 ; H03F3/60 ; H03F3/72
Abstract:
A first transmit path, a second transmit path, and a third transmit path are disclosed. The first transmit path includes a first radio frequency (RF) power amplifier (PA) and alpha switching circuitry, which is coupled to an output from the first RF PA. The second transmit path includes a second RF PA and beta switching circuitry, which is coupled to an output from the second RF PA. The third transmit path includes a third RF PA.
Public/Granted literature
- US20130217341A1 HIGH EFFICIENCY PATH BASED POWER AMPLIFIER CIRCUITRY Public/Granted day:2013-08-22
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