发明授权
US09079228B2 Methodology for cleaning of surface metal contamination from an upper electrode used in a plasma chamber
有权
用于清洁等离子体室中使用的上电极的表面金属污染的方法
- 专利标题： Methodology for cleaning of surface metal contamination from an upper electrode used in a plasma chamber
- 专利标题（中）： 用于清洁等离子体室中使用的上电极的表面金属污染的方法
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申请号： US12962166申请日： 2010-12-07
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公开(公告)号： US09079228B2公开(公告)日： 2015-07-14
- 发明人: Hong Shih , Armen Avoyan , Shashank C. Deshmukh , David Carman
- 申请人： Hong Shih , Armen Avoyan , Shashank C. Deshmukh , David Carman
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Buchanan Ingersoll & Rooney PC
- 主分类号： B08B3/08
- IPC分类号： B08B3/08
摘要：
A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode.
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