Invention Grant
- Patent Title: Memory module for high-speed operations
- Patent Title (中): 内存模块,用于高速运行
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Application No.: US13766933Application Date: 2013-02-14
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Publication No.: US09082464B2Publication Date: 2015-07-14
- Inventor: Myung-Hee Sung , Chang-Woo Ko , Jea-Eun Lee , Young-Ho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0066314 20120620
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/04 ; G11C7/02 ; G11C7/10 ; G11C7/22 ; G11C11/4076 ; G11C11/4093

Abstract:
A memory module includes a plurality of buses. A plurality of memory chips is mounted on a module board and is connected to a first node, a second node, and a plurality of third nodes of the plurality of buses. The first node, the second node, and the third nodes branch off to a first memory chip, a second memory chip, and the third memory chips, respectively. A length of the plurality of buses between the first and second nodes is longer than a length of the plurality of buses between adjacent nodes from among the second node and the third nodes.
Public/Granted literature
- US20130208524A1 MEMORY MODULE FOR HIGH-SPEED OPERATIONS Public/Granted day:2013-08-15
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