Invention Grant
- Patent Title: R-T-B based permanent magnet
- Patent Title (中): R-T-B型永久磁铁
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Application No.: US14262156Application Date: 2014-04-25
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Publication No.: US09082537B2Publication Date: 2015-07-14
- Inventor: Ryuji Hashimoto , Kenichi Suzuki , Kyung-ku Choi , Kenichi Nishikawa
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2013-092235 20130425
- Main IPC: H01F1/057
- IPC: H01F1/057 ; H01F10/12

Abstract:
The present invention provides a permanent magnet which is excellent in the temperature properties and the magnetic properties of which will not be significantly decreased, compared to the conventional R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Y-T-B based crystal layer can be formed by alternatively stacking R1-T-B and Y-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the temperature coefficient of the Y-T-B based crystal layer can be improved.
Public/Granted literature
- US20140320246A1 R-T-B BASED PERMANENT MAGNET Public/Granted day:2014-10-30
Information query
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