发明授权
US09082762B2 Electromigration-resistant under-bump metallization of nickel-iron alloys for Sn-rich solder bumps in Pb-free flip-clip
有权
在无铅触点夹中，用于富Sn焊料凸块的镍 - 铁合金的耐金属凸点蚀刻金属化
- 专利标题： Electromigration-resistant under-bump metallization of nickel-iron alloys for Sn-rich solder bumps in Pb-free flip-clip
- 专利标题（中）： 在无铅触点夹中，用于富Sn焊料凸块的镍 - 铁合金的耐金属凸点蚀刻金属化
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申请号： US12647999申请日： 2009-12-28
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公开(公告)号： US09082762B2公开(公告)日： 2015-07-14
- 发明人: Sung K. Kang , Paul A. Lauro , Minhua Lu , Da-Yuan Shih
- 申请人： Sung K. Kang , Paul A. Lauro , Minhua Lu , Da-Yuan Shih
- 申请人地址： unknown Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： unknown Armonk
- 代理机构： The Law Offices of Robert J. Eichelburg
- 代理商 Robert J. Eichelburg
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/44 ; H01L23/498 ; H01L23/00
摘要：
A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process. In another embodiment a process comprises manufacturing an electromigration-resistant UBM Sn-rich Pb-free solder bump flip chip structure wherein the electromigration-resistant UBM structure comprises a four-layer structure, or a three-layer structure, wherein the four layer structure is formed by providing 1) an adhesion layer, 2) a Cu seed layer for plating, 3) a reaction barrier layer, and 4) a wettable layer for joining to the solder, and the three-layer structure is formed by providing 1) an adhesion layer, 2) a reaction barrier layer, and 3) a wettable layer. In a further embodiment, the reaction barrier layer comprises metals selected from Ni, Fe, Pd, Pt, Co, Cu and their alloys, and combinations thereof. A structure comprises a product produced by the immediately foregoing process.