Invention Grant
US09082819B2 Process for thinning the active silicon layer of a substrate of “silicon on insulator” (SOI) type
有权
用于使“绝缘体上硅”（SOI）型衬底的有源硅层变薄的工艺
- Patent Title: Process for thinning the active silicon layer of a substrate of “silicon on insulator” (SOI) type
- Patent Title (中): 用于使“绝缘体上硅”（SOI）型衬底的有源硅层变薄的工艺
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Application No.: US14382738Application Date: 2013-01-30
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Publication No.: US09082819B2Publication Date: 2015-07-14
- Inventor: Francois Boedt , Sebastien Kerdiles
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1252203 20120312
- International Application: PCT/IB2013/000147 WO 20130130
- International Announcement: WO2013/136146 WO 20130919
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/02 ; H01L21/762 ; H01L21/66 ; H01L21/306
Abstract:
The invention relates to a process for thinning the active silicon layer of a substrate, which comprises an insulator layer between the active layer and a support, this process comprising one step of sacrificial thinning of active layer by formation of a sacrificial oxide layer by sacrificial thermal oxidation and deoxidation of the sacrificial oxide layer. The process is noteworthy in that it comprises: a step of forming a complementary oxide layer on the active layer, using an oxidizing plasma, this layer having a thickness profile complementary to that of oxide layer, so that the sum of the thicknesses of the oxide layer and of the sacrificial silicon oxide layer are constant over the surface of the treated substrate, a step of deoxidation of this oxide layer, so as to thin active layer by a uniform thickness.
Public/Granted literature
- US20150031190A1 PROCESS FOR THINNING THE ACTIVE SILICON LAYER OF A SUBSTRATE OF "SILICON ON INSULATOR" (SOI) TYPE Public/Granted day:2015-01-29
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