Invention Grant
US09082852B1 LDMOS FinFET device using a long channel region and method of manufacture
有权
LDMOS FinFET器件采用长沟道区和制造方法
- Patent Title: LDMOS FinFET device using a long channel region and method of manufacture
- Patent Title (中): LDMOS FinFET器件采用长沟道区和制造方法
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Application No.: US14560472Application Date: 2014-12-04
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Publication No.: US09082852B1Publication Date: 2015-07-14
- Inventor: Qing Liu , Ruilong Xie , Xiuyu Cai , Chun-Chen Yeh
- Applicant: STMicroelectronics, Inc. , International Business Machines Corporation , GlobalFoundries Inc
- Applicant Address: US TX Coppell KY Grand Cayman US NY Armonk
- Assignee: STMicroelectronics, Inc.,GlobalFoundries Inc.,International Business Machines Corporation
- Current Assignee: STMicroelectronics, Inc.,GlobalFoundries Inc.,International Business Machines Corporation
- Current Assignee Address: US TX Coppell KY Grand Cayman US NY Armonk
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A FinFET includes a semiconductor fin supporting a first transistor and a second transistor. A first transistor gate electrode extends over a first channel region of the fin and a second transistor gate electrode extends over a second channel region of the fin. Epitaxial growth material on a top of the fin forms a raised source region on a first side of the first transistor gate electrode, an intermediate region between a second side of the first transistor gate electrode and a first side of the second transistor gate electrode, and a raised drain region on a second side of the second transistor gate electrode. The first and second transistor gate electrodes are short circuit connected to each other, with the first transistor configured to have a first threshold voltage and the second transistor configured to have a second threshold voltage different from the first threshold voltage.
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