发明授权
- 专利标题: Method for crystallizing a silicon substrate
- 专利标题(中): 硅衬底结晶方法
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申请号: US13890476申请日: 2013-05-09
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公开(公告)号: US09087697B2公开(公告)日: 2015-07-21
- 发明人: Sung-Ho Kim , Min-Hwan Choi , Min-Ji Baek , Sang-Kyung Lee , Sang-Ho Jeon , Jong-Moo Huh
- 申请人: Sung-Ho Kim , Min-Hwan Choi , Min-Ji Baek , Sang-Kyung Lee , Sang-Ho Jeon , Jong-Moo Huh
- 申请人地址: KR Yongin, Gyeonggi-Do
- 专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人: SAMSUNG DISPLAY CO., LTD.
- 当前专利权人地址: KR Yongin, Gyeonggi-Do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2012-0121908 20121031
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/66
摘要:
A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.
公开/授权文献
- US20140120704A1 METHOD FOR CRYSTALLIZING A SILICON SUBSTRATE 公开/授权日:2014-05-01
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