Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14553835Application Date: 2014-11-25
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Publication No.: US09087709B2Publication Date: 2015-07-21
- Inventor: Makoto Okada , Shuuichi Kariyazaki , Wataru Shiroi , Masafumi Suzuhara , Naoko Sera
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2012-267653 20121206
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L25/065 ; H01L23/498 ; H01L23/00 ; H01L23/02 ; H01L23/28 ; H01L23/04 ; H01L23/055
Abstract:
A semiconductor device includes a main surface, a back surface opposite to the main surface, a first side on the main surface, a second side opposite to the first side, a third side between the first side and the second side, a fourth side opposite to the third side, a first point on a periphery of the main surface between the first side and the third side, a second point on the periphery of the main surface between the second side and the fourth side, a third point on the periphery of the main surface between the first side and the fourth side, anda fourth point on the periphery of the main surface between the third side and the second side, a first semiconductor chip disposed over the main surface of the substrate, and a second semiconductor chip disposed over the main surface of the substrate.
Public/Granted literature
- US20150076684A1 Semiconductor Device Public/Granted day:2015-03-19
Information query
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