Semiconductor device, solid-state imaging device, method for manufacturing semiconductor device, method for manufacturing solid-state imaging device, and electronic apparatus

Invention Grant

US09087757B2 Semiconductor device, solid-state imaging device, method for manufacturing semiconductor device, method for manufacturing solid-state imaging device, and electronic apparatus 有权

Title translation: 半导体器件，固态成像器件，半导体器件的制造方法，固态成像器件的制造方法以及电子器件

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Patent Title: Semiconductor device, solid-state imaging device, method for manufacturing semiconductor device, method for manufacturing solid-state imaging device, and electronic apparatus
Patent Title (中): 半导体器件，固态成像器件，半导体器件的制造方法，固态成像器件的制造方法以及电子器件
Application No.: US14039836

Application Date: 2013-09-27
Publication No.: US09087757B2

Publication Date: 2015-07-21
Inventor: Yuki Miyanami
Applicant: Sony Corporation
Applicant Address: JP Tokyo
Assignee: Sony Corporation
Current Assignee: Sony Corporation
Current Assignee Address: JP Tokyo
Agency: Fishman Stewart Yamaguchi PLLC
Priority: JP2010-164125 20100721
Main IPC: H01L21/76
IPC: H01L21/76 ; H01L27/146 ; H01L21/762

Semiconductor device, solid-state imaging device, method for manufacturing semiconductor device, method for manufacturing solid-state imaging device, and electronic apparatus

Abstract:

Disclosed herein is a semiconductor device including an element isolation region configured to be formed on a semiconductor substrate, wherein the element isolation region is formed of a multistep trench in which trenches having different diameters are stacked and diameter of an opening part of the lower trench is smaller than diameter of a bottom of the upper trench.

Abstract(Chinese):

本文公开了一种半导体器件，其包括被配置为形成在半导体衬底上的元件隔离区域，其中元件隔离区域由多个沟槽形成，其中具有不同直径的沟槽被堆叠，并且下沟槽的开口部分的直径为小于上沟槽底部的直径。

Public/Granted literature

US20140030840A1 SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2014-01-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/71	..限定在组H01L21／70中的器件的特殊部件的制造（H01L21/28，H01L21/44，H01L21/48优先）
H01L21/76	...组件间隔离区的制作