Invention Grant
US09087870B2 Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same
有权
集成电路包括具有浅沟槽隔离的FINFET器件，其包括热氧化物层及其制造方法
- Patent Title: Integrated circuits including FINFET devices with shallow trench isolation that includes a thermal oxide layer and methods for making the same
- Patent Title (中): 集成电路包括具有浅沟槽隔离的FINFET器件，其包括热氧化物层及其制造方法
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Application No.: US13904626Application Date: 2013-05-29
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Publication No.: US09087870B2Publication Date: 2015-07-21
- Inventor: Wei Hua Tong , Huang Liu , HongLiang Shen , Jin Ping Liu , Seung Kim
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L29/06 ; H01L21/3115 ; H01L29/78
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes etching an enhanced high-aspect-ratio process (eHARP) oxide fill that is disposed in an STI trench between two adjacent fins to form a recessed eHARP oxide fill. The two adjacent fins extend from a bulk semiconductor substrate. A silicon layer is formed overlying the recessed eHARP oxide fill. The silicon layer is converted to a thermal oxide layer to further fill the STI trench with oxide material.
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