Invention Grant
US09087872B2 Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said method
有权
在半导体衬底中形成绝缘沟槽的方法和通过所述方法获得的结构，特别是CMOS图像传感器
- Patent Title: Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said method
- Patent Title (中): 在半导体衬底中形成绝缘沟槽的方法和通过所述方法获得的结构，特别是CMOS图像传感器
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Application No.: US14168167Application Date: 2014-01-30
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Publication No.: US09087872B2Publication Date: 2015-07-21
- Inventor: Laurent Favennec , Arnaud Tournier , François Roy
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Seed IP Law Group PLLC
- Priority: FR1156861 20110727
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L27/146
Abstract:
A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.
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