Invention Grant
- Patent Title: Method and apparatus for stacked semiconductor chips
- Patent Title (中): 层叠半导体芯片的方法和装置
-
Application No.: US14464014Application Date: 2014-08-20
-
Publication No.: US09087883B2Publication Date: 2015-07-21
- Inventor: SeokHyun Lee , Jin-Woo Park , Taesung Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP.
- Priority: KR10-2012-0073960 20120706
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/768 ; H01L23/48 ; H01L23/31 ; H01L23/00 ; H01L25/065 ; H01L21/82 ; H01L21/56
Abstract:
Stacked semiconductor chips include a bonding-wire-free interconnection electrically connecting the semiconductor chips to each. An opening in an adhesion layer between the semiconductor chips may provide a path for the interconnection from a bonding pad on one semiconductor chip, along a sidewall insulation layer of the semiconductor chip, along a sidewall insulation layer of another semiconductor chip to a bonding pad on the other semiconductor chip.
Public/Granted literature
- US20150031170A1 METHOD AND APPARATUS FOR STACKED SEMICONDUCTOR CHIPS Public/Granted day:2015-01-29
Information query
IPC分类:
