发明授权
- 专利标题: Semiconductor devices with 2DEG and 2DHG
- 专利标题(中): 具有2DEG和2DHG的半导体器件
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申请号: US13812725申请日: 2011-06-07
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公开(公告)号: US09087889B2公开(公告)日: 2015-07-21
- 发明人: Akira Nakajima , Sankara Narayanan Ekkanath Madathil
- 申请人: Akira Nakajima , Sankara Narayanan Ekkanath Madathil
- 申请人地址: GB Sheffield
- 专利权人: The University of Sheffield
- 当前专利权人: The University of Sheffield
- 当前专利权人地址: GB Sheffield
- 代理机构: Fraser Clemens Martin & Miller LLC
- 代理商 William J. Clemens
- 优先权: GB1012622.5 20100728
- 国际申请: PCT/GB2011/051065 WO 20110607
- 国际公布: WO2012/013943 WO 20120202
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L27/095 ; H01L29/10 ; H01L29/423 ; H01L29/78 ; H01L29/20
摘要:
A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.
公开/授权文献
- US20130221409A1 SEMICONDUCTOR DEVICES WITH 2DEG AND 2DHG 公开/授权日:2013-08-29