- 专利标题: Photovoltaic solar cell and method for producing a photovoltaic solar cell
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申请号: US13810028申请日: 2011-07-11
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公开(公告)号: US09087940B2公开(公告)日: 2015-07-21
- 发明人: Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
- 申请人: Benjamin Thaidigsmann , Florian Clement , Daniel Biro , Andreas Wolf , Ralf Preu
- 申请人地址: DE München
- 专利权人: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- 当前专利权人: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
- 当前专利权人地址: DE München
- 代理机构: Volpe and Koenig, P.C.
- 优先权: DE102010026960 20100712
- 国际申请: PCT/EP2011/003451 WO 20110711
- 国际公布: WO2012/007143 WO 20120119
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L31/0224 ; H01L31/068 ; H01L31/18
摘要:
The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the rear side of the solar cell, which is formed in a manner electrically conductively connected to the feed through contact structure. The invention is characterized in that in method step B and/or a further method step in addition a feed through emitter region of the emitter doping type extending from the front side to the rear side is formed in each case in the semiconductor substrate on the walls of the cutouts, in that in method step C the insulation layer is applied in a manner covering the rear side of the semiconductor substrate, if appropriate further intervening intermediate layers, in that in method step D the rear-side contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the rear-side contact structure extends to regions of the semiconductor substrate having base doping and, in these regions, on account of the intervening insulation layer, an electrical insulation is formed between rear-side contact structure and semiconductor substrate, and the base contact structure is applied to the insulation layer, if appropriate to further intermediate layers, in such a way that the base contact structure penetrates through the insulation layer at least in regions, such that an electrically conductive connection is produced between base contact structure and semiconductor substrate. The invention furthermore relates to a photovoltaic solar cell.