发明授权
US09087957B2 Method for producing an emitter structure and emitter structures resulting therefrom
有权
用于产生由其产生的发射极结构和发射极结构的方法
- 专利标题: Method for producing an emitter structure and emitter structures resulting therefrom
- 专利标题(中): 用于产生由其产生的发射极结构和发射极结构的方法
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申请号: US12608761申请日: 2009-10-29
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公开(公告)号: US09087957B2公开(公告)日: 2015-07-21
- 发明人: Kris Van Nieuwenhuysen , Filip Duerinckx
- 申请人: Kris Van Nieuwenhuysen , Filip Duerinckx
- 申请人地址: BE Leuven
- 专利权人: IMEC
- 当前专利权人: IMEC
- 当前专利权人地址: BE Leuven
- 代理机构: Knobbe, Martens, Olson & Bear LLP
- 主分类号: H01L31/18
- IPC分类号: H01L31/18 ; H01L31/0236 ; H01L31/068
摘要:
A method for forming an emitter structure on a substrate and emitter structures resulting therefrom is disclosed. In one aspect, a method includes forming, on the substrate, a first layer comprising semiconductor material. The method also includes texturing a surface of the first layer, thereby forming a first emitter region from the first layer, wherein the first emitter region has a first textured surface. The method also includes forming a second emitter region at the first textured surface, the second emitter region having a second textured surface.
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