Invention Grant
US09088124B2 Semiconductor laser with cathode metal layer disposed in trench region
有权
具有阴极金属层的半导体激光器设置在沟槽区域中
- Patent Title: Semiconductor laser with cathode metal layer disposed in trench region
- Patent Title (中): 具有阴极金属层的半导体激光器设置在沟槽区域中
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Application No.: US14585591Application Date: 2014-12-30
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Publication No.: US09088124B2Publication Date: 2015-07-21
- Inventor: Scott Eugene Olson
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee: SEAGATE TECHNOLOGY LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hollingsworth Davis, LLC
- Main IPC: H01S5/022
- IPC: H01S5/022 ; H01S5/042 ; H01S5/20 ; H01S5/34 ; H01S5/22 ; H01L33/38

Abstract:
A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.
Public/Granted literature
- US20150110145A1 Semiconductor Laser with Cathode Metal Layer Disposed in Trench Region Public/Granted day:2015-04-23
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