发明授权
- 专利标题： Metal gate structure and method
- 专利标题（中）： 金属门结构及方法
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申请号： US13839631申请日： 2013-03-15
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公开(公告)号： US09093375B2公开(公告)日： 2015-07-28
- 发明人: Hsiu-Jung Yen , Jen-Pan Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L49/02 ; H01L27/06 ; H01L29/51
摘要：
A semiconductor structure comprises a metal gate structure formed in a substrate, wherein the metal gate structure comprises a first film formed of a first material and formed on a bottom and sidewalls of a gate trench, a second film formed of a second material and formed over the first film and a gate electrode formed over the second film. The semiconductor structure further comprises a resistor structure formed in the substrate, where the resistor structure comprises a third film formed of the first material and formed on a bottom and sidewalls of a resistor trench and a fourth film formed of the second material and formed over the third film.
公开/授权文献
- US20140264624A1 Metal Gate Structure and Method 公开/授权日：2014-09-18
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