发明授权
US09093495B2 Method and structure to reduce FET threshold voltage shift due to oxygen diffusion
有权
减少由于氧扩散引起的FET阈值电压偏移的方法和结构
- 专利标题： Method and structure to reduce FET threshold voltage shift due to oxygen diffusion
- 专利标题（中）： 减少由于氧扩散引起的FET阈值电压偏移的方法和结构
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申请号： US13342674申请日： 2012-01-03
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公开(公告)号： US09093495B2公开(公告)日： 2015-07-28
- 发明人: Christopher Vincent Baiocco , Michael P. Chudzik , Deleep R. Nair , Jay M. Shah
- 申请人： Christopher Vincent Baiocco , Michael P. Chudzik , Deleep R. Nair , Jay M. Shah
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Whitham Curtis Christofferson & Cook, PC
- 代理商 Joseph P. Abate
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/762 ; H01L29/66 ; H01L29/78
摘要：
Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.
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