发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13466664申请日： 2012-05-08
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公开(公告)号： US09093539B2公开(公告)日： 2015-07-28
- 发明人: Shinya Sasagawa , Hitoshi Nakayama , Hiroshi Fujiki
- 申请人： Shinya Sasagawa , Hitoshi Nakayama , Hiroshi Fujiki
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2011-108666 20110513
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/336 ; H01L21/36 ; H01L29/66 ; H01L27/12 ; H01L21/02
摘要：
To establish a processing technique in manufacture of a semiconductor device including an In—Sn—Zn—O-based semiconductor. An In—Sn—Zn—O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl2, BCl3, SiCl4, or the like. In formation of a source electrode layer and a drain electrode layer, a conductive layer on and in contact with the In—Sn—Zn—O-based semiconductor layer can be selectively etched with little removal of the In—Sn—Zn—O-based semiconductor layer with the use of a gas containing oxygen or fluorine in addition to a gas containing chlorine.
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