发明授权
US09093562B2 Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head
有权
半导体复合装置，半导体复合装置的制造方法，使用该半导体复合装置的LED头，以及使用该LED头的图像形成装置
- 专利标题： Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head
- 专利标题（中）： 半导体复合装置，半导体复合装置的制造方法，使用该半导体复合装置的LED头，以及使用该LED头的图像形成装置
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申请号： US12926743申请日： 2010-12-07
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公开(公告)号： US09093562B2公开(公告)日： 2015-07-28
- 发明人: Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
- 申请人： Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
- 申请人地址： JP Tokyo
- 专利权人： OKI DATA CORPORATION
- 当前专利权人： OKI DATA CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Rabin & Berdo, P.C.
- 优先权： JP2004-326123 20041110
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; B41J2/45 ; H01L27/15
摘要：
A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.
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